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PHYSICOCHEMICAL PROPERTIES OF CUPROUS OXIDE AT HIGH TEMPERATUREMALUENDA J; FARHI R; PETOT ERVAS G et al.1980; REV. INT. HAUTES TEMP. REFRACT.; ISSN 0035-3434; FRA; DA. 1980; VOL. 17; NO 2; PP. 148-153; ABS. FRE; BIBL. 9 REF.Article

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ETUDE DE LA CROISSANCE EN PHASE VAPEUR AUX ORGANOMETALLIQUES ET DES PROPRIETES DE COUCHES MINCES DE GAAS-GAALAS A STRUCTURE "SUPER-RESEAUX" = INVESTIGATION OF THE GROWTH FROM ORGANOMETALLICS IN THE VAPOUR PHASE AND PROPERTIES OF THIN FILMS OF GAAS-GAALAS WITH A "SUPER-LATTICE" STRUCTUREMALUENDA J; FRIJLINK PM; HALLAIS J et al.1982; ; FRA; DA. 1982; DGRST/81 A 0953; 43 P.; 30 CM; BIBL. DISSEM.; ACTION CONCERTEE: RECHERCHE EXPLORATOIRE POUR LES COMPOSANTS ELECTRONIQUESReport

Effects of dislocations on threshold voltage of GaAs field-effect transistorsSUCHET, P; DUSEAUX, M; MALUENDA, J et al.Journal of applied physics. 1987, Vol 62, Num 3, pp 1097-1101, issn 0021-8979Article

Homogeneity qualification of GaAs substrates for large scale integration applicationsMALUENDA, J; MARTIN, G. M; SCHINK, H et al.Applied physics letters. 1986, Vol 48, Num 11, pp 715-717, issn 0003-6951Article

A 200-mW GaAs 1K SRAM with 2-ns cycle timeGABILLARD, B; DUCOURANT, T; ROCHER, C et al.IEEE journal of solid-state circuits. 1987, Vol 22, Num 5, pp 693-698, issn 0018-9200Article

GaAs substrate materiel assessment using a high lateral resolution MESFET test patternSCHINK, H; PACKEISER, G; MALUENDA, J et al.Japanese journal of applied physics. 1986, Vol 25, Num 5, pp L369-L372, issn 0021-4922, part 2Article

A 0.4-μm gate-length AlGaAs/GaAs P-channel HIGFET with 127-mS/mm transconductance at 77 KBOISSENOT, P; DELHAYE, E; MALUENDA, J et al.IEEE electron device letters. 1990, Vol 11, Num 7, pp 282-284, issn 0741-3106, 3 p.Article

Cyclotron resonance from the far-infrared transmission and the photoconductivity of a two-dimensional electron gas in a GaAs/AlGaAs heterojunctionHORSTMAN, R. E; BROEK, E. J. V. D; WOLTER, J et al.Solid state communications. 1984, Vol 50, Num 8, pp 753-756, issn 0038-1098Article